High-T
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© Woodhead Publishing Limited, 2011
applications have been demonstrated using specialized single junctions or arrays
with up to 100 junctions. The ‘SCENET roadmap for superconductor digital
electronics’ by ter Brake et al. (2006) gives an overview in status and future
developments and summarizes that after the ‘decade of the materials science’ it is
now the turn of the ‘decade of the market’.
High-T
c
Josephson junctions promise about a ten times higher circuit speed than
low-T
c
ones corresponding to their ten times larger I
c
R
N
product. The additional
advantage of ‘self-shunted’ junctions requires no external normal conducting shunt
resistors which leads to smaller areas for circuits on chips. The main problem up to
now has been the quite large spread in junction parameters which limits the circuit
complexity to 10–100 Josephson junctions. In spite of these drawbacks ter Brake
et al. (2006) expected to have important niche applications in hand-held equipment
and satellite payloads, where low weight, size and cooling power consumption (as
compared to those for low-T
c
Josephson circuits) is a decisive issue.
Trends in HTS JJ technology are connected to miniaturization like sub-
micrometer junctions and use of intrinsic JJ arrays. Here the problem of spread is
still unsolved but progress like the ‘double-sided technology’ is going on. Thus
progress in voltage standards and voltage synthesizers as well as in radiation
sources and THz applications have to be expected in the near future. For single
junctions and spatial distributed arrays application as mixers, radiation detectors
and sources up to THz range will be realized not only for astronomy but for X-ray
spectroscopy and THz imaging, too.
Finally, it should be mentioned that there is rising interest in high-T
c
Josephson
junctions for solid-state qubits because of the new possibilities to manipulate
quantum phases and their higher intrinsic stability.
Many new aspects have to be expected by other materials used for the junctions,
for example for coupling barriers or metal electrodes. Even for the high-T
c
superconductors there may be new materials besides MgB
2
used in the future. The
discovery of the iron-pnictides (Kamihara et al., 2008; Chen et al., 2008) gives
the possibility of replacing the standard cuprates. Up to now there have mainly
been basic works to study the symmetry of the order parameter in these materials
(e.g. Parish et al., 2008; Hicks et al., 2009) and deriving novel properties in
Josephson junctions involving the pairing state of the iron-pnictides (Tsai et al.,
2009; Parker and Mazin, 2009), but first hybrid Josephson junctions with FeAs
single crystals and Pb counter-electrodes have been demonstrated (Zhang et al.,
2009a). All-pnictide Josephson junctions were realized by crossing two differently
doped single crystals (Zhang et al., 2009b) or with thin films on bicrystal substrates
resulting in grain boundary junctions (Katase et al., 2010). The reported rather
conventional behaviour of the pnictide Josephson junctions looks very promising
as RSJ-like IV-characteristics with quite small I
c
R
N
products, clear Shapiro steps,
and Fraunhofer-like magnetic field dependence of the critical Josephson current
were reported. There may be some new kinds of Josephson junctions based on the
assumed extended s-wave symmetry of some of the Fe-based superconductors.