and the secondary electrons emitted from this are accelerated through a number of
dynodes. Current amplifications of 10
5
or more are possible. At the anode, the current
pulse passes into a resistor, and the resulting voltage pulse is processed by the following
electronics. This may include some kind of multichannel amplifier (mca), a device for
plotting the number of received photons having a particular energy as a function of that
energy. Since the voltage received is proportional to the photon energy, the scintillation
detector system displays the incident photon spectrum. Avalanche photodiodes behave in
a way similar to photomultipliers.
The materials used as scintillators must:
∑ be transparent,
∑ stop the incident photon (which implies that the atomic mass of the atoms in the mate-
rial is large),
∑ produce short flashes of light (so that count rates can be high),
∑ have a small linewidth, and
∑ have a linear response to incident photon energy.
Plastic scintillators usually have poor stopping power and energy resolution. They can,
however, receive high incident beam fluxes.
Most scintillators are made from alkali halides (NaI(Tl), CsI) or tungstates (CdWO
4
). These
have high stopping powers. But, because they are made from materials containing iodine,
caesium, cadmium, and tungsten, they have absorption edges (Sections 3.1.2 and 5.5). This
causes a dip in their efficiency in the region of the absorption edges. Count rates that can be
detected are typically less that 10
5
cps, although some systems can operate up to 10
6
cps.
4.4. Solid state detectors
Solid state detectors for X-rays are made from either silicon doped with lithium (SiLi) or
high-purity germanium (HPGE). Like scintillation detectors, the incident photon causes
ionization, and the amount of ionization is proportional to the incident photon energy. The
cloud of ionization produced is drawn to the anode of what is effectively a semiconductor
diode. Thereafter, the current pulse is amplified and passes into a multichannel analyser
system. Solid state detectors usually have reasonable energy resolution (150 eV for the
SiLi and 180 eV for the HPGE). The operational energy range for these commences at
4 keV (determined by the thickness of the protective beryllium window). The upper limit for
SiLi detectors is 20 keV, whereas the upper limit for HPGE is several MeV. The linewidth
increases slightly with incident beam energy. The HPGE detector efficiency is not 100%
over this range because of the L-edge absorption of germanium, which occurs around
11 keV (Fig. 6i). Both types of detectors are relative slow-speed devices (<2 ¥ 10
4
cps).
When high count rates are required, multi-element detectors are used.
Solid state detectors find application in a wide range of experiments at synchrotron radi-
ation sources. They are used for:
∑ X-ray fluorescence analysis of materials irradiated by the X-ray beam;
∑ energy-dispersive X-ray diffraction from small samples in high-pressure cells; and
∑ fluorescent XAFS and XANES experiments.
42 D. Creagh