Street R.A. Hydrogenated Amorphous Silicon

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размер 11.64 МБ
добавлен 15 июня 2011 г.

Cambridge University Press. 1991. 432 p.

"Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is conceed with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

Contents

Introduction
Growth and structure of amorphous silicon
The electronic density of states
Defects and their electronic states
Substitutional doping
Defect reactions, thermal equilibrium and metastability
Electronic transport
The recombination of excess carriers
Contacts, interfaces and multilayers
Amorphous silicon device technology

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